Consider the configuration of conductors of Problem 1.17, with all conductors except S1 held at zero potential.
((a)) Show that the potential Φ(x) anywhere in the volume V and on any of the surfaces Si can be written
Φ(x)=4πϵ01∮S1σ1(x′)G(x,x′)da′
where σ1(x′) is the surface charge density on S1 and G(x,x′) is the Green function potential for a point charge in the presence of all the surfaces that are held at zero potential (but with S1 absent). Show also that the electrostatic energy is
W=8πϵ01∮S1da∮S1da′σ1(x)G(x,x′)σ1(x′)
where the integrals are only over the surface S1.
((b)) Show that the variational expression
C−1[σ]=4πϵ0[∮S1σ(x)da]2∮S1da∮S1da′σ(x)G(x,x′)σ(x′)
with an arbitrary integrable function σ(x) defined on S1, is stationary for small variations of σ away from σ1. Use Thomson's theorem to prove that the reciprocal of C−1[σ] gives a lower bound to the true capacitance of the conductor S1.